NTD3055L104, NTDV3055L104
TYPICAL CHARACTERISTICS
24
20
16
12
8
V GS = 10 V
8V
6V
5V
4.5 V
4V
3.5 V
24
20
16
12
8
V DS ≥ 10 V
T J = 25 ° C
4
0
0
1
2
3
4
5
6
7
3V
8
4
0
1
1.5
T J = 100 ° C
2 2.5
3
T J = ? 55 ° C
3.5 4
4.5
5
5.5
6
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 1. On ? Region Characteristics
V GS , GATE ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
V GS = 5 V
T J = 100 ° C
T J = 25 ° C
T J = ? 55 ° C
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
V GS = 10 V
T J = 100 ° C
T J = 25 ° C
T J = ? 55 ° C
0
0
4
8
12
16
20
24
0
0
4
8
12
16
20
24
2
I D , DRAIN CURRENT (AMPS)
Figure 3. On ? Resistance versus
Gate ? to ? Source Voltage
10,000
I D , DRAIN CURRENT (AMPS)
Figure 4. On ? Resistance versus Drain Current
and Gate Voltage
1.8
1.6
1.4
1.2
1
0.8
0.6
I D = 6 A
V GS = 5 V
1000
100
10
1
V GS = 0 V
T J = 150 ° C
T J = 100 ° C
? 50 ? 25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On ? Resistance Variation with
Temperature
http://onsemi.com
4
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 6. Drain ? to ? Source Leakage Current
versus Voltage
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相关代理商/技术参数
NTD3055L104/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 12 Amps, 60 Volts, Logic Level
NTD3055L104-001 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L104-1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA
NTD3055L104-1G 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L104G 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L104G 制造商:ON Semiconductor 功能描述:MOSFET
NTD3055L104T4 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTD3055L104T4G 功能描述:MOSFET 60V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube